Overview
SIGEN was founded in September 1997 as an IP company. The company opened its R&D Center in Campbell, California, and embarked on a program to build the process technology and equipment infrastructure needed to fabricate engineered and substrate solutions
Soon thereafter, SiGen developed and demonstrated a core set of leading-edge processes for Silicon-on-insulator (SOI) wafer fabrication using innovations such as plasma-activated bonding and room-temperature cleaving. The company completed a pilot production facility in 2000 to demonstrate its technology capabilities. After successfully introducing its technology and completing its first major commercial license in 2004, SiGen made the transition to begin a fabless IP licensor and equipment provider for its engineered substrate solutions covering the 200mm/300mm market.
As an outgrowth of SiGen's bonded layer transfer technology for the semiconductor, optoelectronic, and display markets, the company developed a next-generation layer transfer (LT) technology called PolyMaxâ„¢. With numerous emerging opportunities, SiGen broadened its market application into the Solar Cell Market.
The PolyMaxâ„¢ technology addresses multiple issues of the current wafering process and market conditions, namely the cost aspects of wafering and the technical barriers to wafer thickness reduction. In addition, SiGen's PolyMaxâ„¢ is a "green" process since there is no sawing, grinding or other mechanical thinning of wafers.
Additional info:
SiGen Corporate Overview (795KB PDF format)